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Title: Co silicide formation on SiGeC/Si and SiGe/Si layers
Authors: Donaton, RA ×
Maex, Karen
Vantomme, André
Langouche, Guido
Morciaux, Y
StAmour, A
Sturm, JC #
Issue Date: Mar-1997
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:70 issue:10 pages:1266-1268
Abstract: The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate interface during the reaction, which blocks the Co diffusion paths. The CoSi2 layers thus formed exhibit a preferential (hOO) orientation. The slow supply of Co atoms to the silicide/Si interface, due to the blocking of Co diffusion paths by Ge and C, is believed to be the reason for this epitaxial alignment. (C) 1997 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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