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Title: Nature of the P-bl interface defect in (100)Si/SiO2 as revealed by electron spin resonance Si-29 hyperfine structure
Authors: Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: Sep-1999
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:48 issue:1-4 pages:113-116
Abstract: Observation by electron spin resonance of the full angular dependence of the hyperfine (hf) interaction spectrum associated with the interfacial P-b1 defect in thermal (100)Si/SiO2 shows that the dominant interaction arises from a single Si-29 atom. The hf tensor displays weakly monoclinic I (nearly axial) symmetry, with the principal axes of the g and hf tensors coinciding. Observation of an identical hf structure consolidates the presence of the P-b1 defect in porous Si. A molecular orbital analysis indicates that the unpaired electron resides for similar to 58% in a single unpaired Si hybrid orbital, found to be 14% s-like and 86% p-like, with the p-orbital pointing closely along a <211> direction at 35.26 degrees with the [100] interface normal. Excluding oxygen as an immediate part of the defect, the results establish the P-b1 core as a tilted (similar to 20 degrees about <011>) Si-3=Si . unit. The moiety is pictured as part of a strained Si-Si dimer near the interface.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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