This item still needs to be validated !
Title: On the electrical activity of misfit and threading dislocations in p-n junctions fabricated in thin strain-relaxed buffer layers
Authors: Simoen, E
Eneman, Geert
Shamuilia, Sheron
Simons, V
Gaubas, E
Delhougne, R
Loo, R
De Meyer, Christina
Claeys, Corneel
Issue Date: 2005
Publisher: Trans tech publications ltd
Series Title: Gettering and defect engineering in semiconductor technology xi vol:108-109 pages:285-290
Abstract: The electrical activity of threading dislocations (TDs), occurring in a thin SiGe Strain Relaxed Buffer (SRB) layer has been investigated by a number of techniques and its impact on the reverse current of p-n junction diodes has been evaluated. It is shown that besides the density of TD, there are at least two other parameters playing an important role. The distance with respect to the metallurgical junction of the 5 rim C-rich layer, used for the strain relaxation and the dopant type in the well region also affect the leakage current. This complex behaviour is further reflected in the Emission Microscopy (EMMI) images, showing different breakdown sites for p+/n or n+/p junctions. Results will be presented whereby one of these parameters is varied, while the others are kept constant, in order to arrive at some idea of the relative importance of the different factors.
ISSN: 1012-0394
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Department of Materials Engineering - miscellaneous
Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science