Title: Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by channeled ion-beam synthesis
Authors: Wu, MF ×
Vantomme, André
Pattyn, Hugo
Langouche, Guido
Bender, Hugo #
Issue Date: Jun-1996
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:68 issue:23 pages:3260-3262
Abstract: Previous reports show that, among all rare-earth silicides, GdSi1.7 is the most difficult one to grow epitaxially with a good crystalline quality on a Si substrate, However, this letter shows that by using channeled implantation, a continuous GdSi1.7 layer with good crystalline quality (chi(min) = 10%) can be formed by implantation of 90 keV Gd ions in Si(111). Besides, the hexagonal phase of the GdSi1.7 layer is stable up to a temperature of 850 degrees C for 30 min, which is much more stable than previously reported. After annealing a temperatures greater than or equal to 900 degrees C for 30 min, the hexagonal GdSi1.7 phase transforms into the orthorhombic GdSi2 phase. Rutherford backscattering/channeling, transmission electron microscopy, and x-ray diffraction are used in this study, (C) 1996 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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