Title: DX center breakdown in high electric fields
Authors: Dargys, A
Zurauskiene, N
Goovaerts, E
Van Hoof, Chris
Borghs, Gustaaf #
Issue Date: 1999
Publisher: Transtec publications ltd
Host Document: Ultrafast phenomena in semiconductors vol:297-2 pages:25-28
Abstract: Experimental results on dynamical breakdown of metastable centers in Al0.3Ga0.7As caused by fast ramped electric fields are presented. The electrical breakdown was found to begin abruptly above threshold field F-th=(1.71+/-0.34)x10(5) V/cm. Persistent conductivity after the breakdown was observed at low temperatures. The breakdown is explained by ionization of DX centers by hot carriers.
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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