Title: High-speed switching of double-barrier resonant-tunneling light-emitting diodes investigated by picosecond electroluminescence measurements
Authors: Romandic, I ×
Zurauskiene, N
Goovaerts, E
Van Hoof, Chris
Borghs, Gustaaf #
Issue Date: 1999
Publisher: Trans Tech Publications
Series Title: Materials Science Forum vol:297-2 pages:29-32
Abstract: Picosecond time-resolved streak-scope measurements of the electroluminescence (EL) of AlAs/GaAs double-barrier resonant tunneling light-emitting diodes are presented The samples are excited by fast electrical pulses (250 ps rise and fall times) and both quantum well and bull; GaAs emissions are monitored, at room and liquid nitrogen temperatures. The effects of barrier thickness, temperature, voltage and device size and geometry on the switching speed are investigated. The optical response of the diodes is very fast (down to 200 ps), showing no significant dependence on temperature and barrier thickness.
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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