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Title: The bending of Si crystals as a means to determine the orientation of defects in Si
Authors: VanBavel, AM × Degroote, Stefan Vantomme, André Stesmans, Andre Langouche, Guido #
Issue Date: 1995
Publisher: Trans Tech Publications
Series Title: Materials Science Forum vol:196-2 pages:1515-1519
Abstract: We have shown through Mossbauer Spectroscopy (MS) that the electric field gradient, associated with an atomic defect, is very sensitive to very small changes in atomic distances, introduced by bending ultra thin Si wafers.
Publication status: published
KU Leuven publication type: IT
Appears in Collections: Nuclear and Radiation Physics Section Semiconductor Physics Section
× corresponding author
# (joint) last author
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