Title: Energy distribution of the (100)Si/HfO2 interface states
Authors: Fedorenko, YG
Truong, L
Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Jun-2004
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:84 issue:23 pages:4771-4773
Abstract: The energy distributions of interface states were determined in (100)Si/HfO2 using capacitance-voltage measurements on structures with the periphery of the metal electrode switched to inversion by controlled application of corona discharge. Together with independently applied ac conductance spectroscopy they reveal a strong impact of the HfO2 deposition technique on the interface trap density. This includes the enhancement of the Si-dangling bond defect (P-b0 centers) density and a contribution of insulator-related traps in samples deposited using a nitrogen-containing precursor. (C) 2004 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science