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Title: High-frequency capacitances in resonant interband tunneling diodes
Authors: Fobelets, K
Vounckx, R
Genoe, Jan
Borghs, Gustaaf
Gronqvist, H
Lundgren, L #
Issue Date: May-1994
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:64 issue:19 pages:2523-2525
Abstract: The junction capacitance in resonant interband tunneling diodes is determined using microwave impedance measurements from 40 MHz to 62 GHz and network parameter extraction. The shape of the capacitance in the positive differential resistance region is totally different from the resonant tunneling diode. The difference can be explained by the intrinsic transport process of carriers in a resonant interband tunneling diode, what is manifested in the conductance characteristic of the device.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
# (joint) last author

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