Title: Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO2 and GeOx(N-y) insulators probed by electron spin resonance
Authors: Stesmans, Andre ×
Afanas'ev, Valeri #
Issue Date: Jun-2005
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:80 pages:22-25
Abstract: Electron spin resonance studies of (100)Ge/GeOxNy/HfO2 and (100)Ge/GeO2 structures fail to reveal interfacial Ge dangling bond type defects. Only paramagnetic defects residing in near-interfacial Ge oxide or Ge(oxy)nitride layers could be observed, which in the former structures appear resistant to passivation treatment in H-2 at 400 degrees C and show no correlation with the major portion of electrically active traps. The results indicate a fundamental difference between the seemingly similar group-IV elemental semiconductor/insulator interfaces for (100)Si and (100)Ge.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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