Title: Impact of Al incorporation in hafnia on interface states in (100)Si/HfAlxOy
Authors: Fedorenko, YG ×
Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Jun-2005
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:80 pages:66-69
Abstract: Interface states in (100)Si/HfAlxOy entities were studied as affected by the oxide composition and post-growth thermal treatment. Incorporation of Al in hafnia is found to reduce the total (fast and slow) trap density compared to the case of elemental Al2O3 and HfO2, though the fast interface traps are only marginally influenced. As compared to the (100)Si/SiO2 case, the excessive density of interface traps in the high-kappa oxide/silicon structure is mainly caused by a significant contribution of some oxide-related defects.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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