Iii-v on dissimilar substrates - epitaxy and alternatives
Borghs, Gustaaf Deboeck, J Pollentier, I Demeester, P Brys, C Dobbelaere, W #
Iop publishing ltd
Gallium arsenide and related compounds 1993 vol:136 issue:136 pages:441-448
Heteroepitaxial growth and thin film transfer are two techniques for the integration of III-V technologies on dissimilar substrates. Crystalline quality remains the issue for heteroepitaxial layers of III-V's on Si. Quality improving techniques are discussed. Stress in the thin epitaxial film is another point of concern but recent progress has alleviated this problem to some extend.