SAMs (self-assembled monolayers) passivation of cobalt microbumps for 3D stacking of Si chips

Hou, Lin; Derakhshandeh, Jaber; Armini, Silvia; Gerets, Carine; De Preter, Inge; Rebibis, Kenneth June; Miller, Andy; De Wolf, Ingrid; Beyne, Eric

SAMs (self-assembled monolayers) passivation of cobalt microbumps for 3D stacking of Si chips

Author:

Hou, Lin

Derakhshandeh, Jaber ; Armini, Silvia ; Gerets, Carine ; De Preter, Inge ; Rebibis, Kenneth June ; Miller, Andy ; De Wolf, Ingrid ; Beyne, Eric

Keywords:

KUL-OC-LMRC

Abstract:

In this paper SAM (self-assembled monolayers) is used to passivate cobalt microbumps for 3D-stacking of Si chips. The SAM deposition process is optimized, using input from characterization techniques such as water contact angle measurement, ATR, AFM and XPS analysis in order to form a monolayer of Thiols-SAM on cobalt microbumps. A 3D stacked Si chips test vehicle was used to demonstrate the effectiveness of the SAM coating on cobalt bumps by measuring the electrical continuity of daisy chains.