Title: Degradation and time dependent breakdown of stressed ferromagnetic tunnel junctions
Authors: Das, Johan
Degraeve, R
Boeve, H
Duchamps, P
Lagae, Liesbet
Groeseneken, Guido
Borghs, Gustaaf
De Boeck, J #
Issue Date: Jun-2001
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:89 issue:11 pages:7350-7352
Abstract: Ferromagnetic tunnel junctions are very sensitive to degradation and breakdown, due to the ultrathin (similar to1 nm) tunnel barrier. When the junction is stressed with a constant current or voltage, a conductance change of the tunnel junction is observed. Sufficiently high stress will lead to breakdown of the junction. As in SiO2 gate oxide reliability studies, the Weibull distribution plot can be obtained from the time to breakdown data. The dependence of the Weibull function on the area and the stress conditions is studied for the Al2O3 barrier of the tunnel junctions. This is the first step of a systematic study of reliability, which is an important issue for the use of tunnel junctions in, e.g., magnetic random access memory applications. (C) 2001 American Institute of Physics.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
Solid State Physics and Magnetism Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science