Title: Large electric-field-induced enhancement of resonant raman-scattering of a single-quantum-well
Authors: Yan, Zc
Goovaerts, E
Van Hoof, Chris
Genoe, Jan
Borghs, Gustaaf
Schoemaker, D #
Issue Date: 1994
Publisher: Academic press (london) ltd
Series Title: Superlattices and Microstructures vol:15 issue:4 pages:377-380
Abstract: The electric-field enhancement of the resonant Raman efficiency of confined optical phonon modes in a single quantum well has been observed in an asymmetrical n-type triple-barrier GaAs/AlAs resonant tunneling structure. The measurement takes advantage of an outgoing resonance with the e(2)-hh(1) exciton transition confined to the wide quantum well, and according to the polarization properties, the Frohlich interaction dominates the scattering mechanism. A fifteenfold increase is found from zero field to 7.5 x 10(4) V/cm, which results from break-down of the parity selection rules for the photon-exciton and the exciton-phonon coupling mechanisms.
ISSN: 0749-6036
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science