Title: HfO2-based insulating stacks on 4H-SiC(0001)
Authors: Afanas'ev, Valeri
Stesmans, Andre
Chen, F
Campbell, SA
Smith, R #
Issue Date: Feb-2003
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:82 issue:6 pages:922-924
Abstract: Depositing HfO2 layers on ultrathin thermally grown SiO2 on 4H-SiC(0001) is demonstrated to yield an insulator with good properties. The stack combines the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC with the high dielectric permittivity of HfO2 (approximate to20). The latter allows application of high electric fields to the SiC surface (up to 3 MV/cm), while keeping the strength of the field in the insulator at a moderate level. (C) 2003 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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