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Title: Influence of low-energy ar-sputtering on the electronic-properties of inas-based quantum-well structures
Authors: Magnee, Phc
Denhartog, Sg
Vanwees, Bj
Klapwijk, Tm
Vandegraaf, W
Borghs, Gustaaf #
Issue Date: Dec-1995
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:67 issue:24 pages:3569-3571
Abstract: The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees C has little effect, and only recovers damage caused by low energy (80 eV) Kaufmann etching. (C) 1995 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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