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Title: ITON Schottky contacts for GaN based UV photodetectors
Authors: Vanhove, Nico
John, J
Lorenz, Anne
Cheng, Kai
Borghs, Gustaaf
Haverkort, J. E. M #
Issue Date: Dec-2006
Publisher: Elsevier science bv
Series Title: Applied surface science vol:253 issue:5 pages:2930-2932
Abstract: Lateral Schottky ultraviolet detectors were fabricated in GaN using indium-tin-oxynitride (ITON) as a contact metal. The GaN semiconductor material was grown on 2 in. sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The Schottky contact has been realized using ITON that has been deposited using sputter techniques. I-V characteristics have been measured with and without UV illumination. The device shows photo-to-dark current ratios of 10(3) at -1 V bias. The spectral responsivity of the UV detectors has been determined. The high spectral responsivity of more than 30 A/W at 240 nm is explained by a high internal gain caused by generation-recombination centers at the ITON/GaN interface. Persistent photocurrent effect has been observed in UV light (on-off) switching operation, time constant and electron capture coefficient of the transition has been determined. (c) 2006 Elsevier B.V. All rights reserved.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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