Lateral Schottky ultraviolet detectors were fabricated in GaN using indium-tin-oxynitride (ITON) as a contact metal. The GaN semiconductor material was grown on 2 in. sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The Schottky contact has been realized using ITON that has been deposited using sputter techniques. I-V characteristics have been measured with and without UV illumination. The device shows photo-to-dark current ratios of 10(3) at -1 V bias. The spectral responsivity of the UV detectors has been determined. The high spectral responsivity of more than 30 A/W at 240 nm is explained by a high internal gain caused by generation-recombination centers at the ITON/GaN interface. Persistent photocurrent effect has been observed in UV light (on-off) switching operation, time constant and electron capture coefficient of the transition has been determined. (c) 2006 Elsevier B.V. All rights reserved.