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Title: Interplay of 2D and 3D charge carriers in Si-delta-doped InSb layers grown epitaxially on GaAs
Authors: DeKeyser, A
Bogaerts, Maria
Karavolas, VC
VanBockstal, L
Herlach, Fritz
Peeters, FM
vandeGraaf, W
Borghs, Gustaaf #
Issue Date: 1996
Publisher: Pergamon-elsevier science ltd
Series Title: Solid-State Electronics vol:40 issue:1-8 pages:395-398
Abstract: Magnetotransport experiments on Si-delta-doped layers in InSb have revealed the presence of a two-dimensional as well as a three-dimensional conduction channel in these structures. A theoretical description of the interplay between two-dimensional and three-dimensional charge carriers is given, taking into account magnetic freeze-out of the three-dimensional electrons and the quantization of electron motion in the two-dimensional electron gas. The nature of the single 2DEG that has been observed in a structure consisting of 10 delta-layers separated by 50 nm of InSb is investigated by depopulation experiments and by additional experiments on bulk InSb layers grown on GaAs.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Laboratory of Experimental Radiotherapy
Physics and Astronomy - miscellaneous
# (joint) last author

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