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Title: H-complexed oxygen vacancy in SiO2: Energy level of a negatively charged state
Authors: Afanas'ev, Valeri ×
Stesmans, André #
Issue Date: Dec-1997
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:71 issue:26 pages:3844-3846
Abstract: The defects generated in SiO2 during irradiation with energetic (10 eV) photons were found to trap electrons at a level 3.1 eV below the oxide conduction bond, The electron spin resonance data and the behavior upon hydrogen passivation indicate that the optically active state may be ascribed to a H-complexed oxygen vacancy in SiO2. The observed injection of electrons to these traps from Si advances the revealed defects as the possible origin of the degradation-induced electrical conduction of thin SiO2 layers. (C) 1997 American Institute of Physics. [S0003-6951(97)03752-2].
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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