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Title: Highly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode
Authors: Van Dorpe, Pol
Motsnyi, VF
Nijboer, M
Goovaerts, E
Safarov, VI
Das, J
Van Roy, Willem
Borghs, Gustaaf
De Boeck, J #
Issue Date: May-2003
Publisher: Inst pure applied physics
Series Title: Japanese journal of applied physics part 2-letters vol:42 issue:5B pages:L502-L504
Abstract: We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations. of at least 24% at 80 K and 12% at room temperature.
URI: 
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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