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Title: Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well
Authors: Triques, ALC
Iikawa, F
Brum, JA
Maialle, MZ
Pereira, RG
Borghs, Gustaaf #
Issue Date: Mar-1999
Publisher: Academic press ltd
Series Title: Superlattices and Microstructures vol:25 issue:3 pages:551-554
Abstract: We studied the carrier-spin polarization in an n-type modulation-doped single quantum well. The sample shows a high electron concentration and the second electron subband is marginally occupied. Photoluminescence and photoluminescence excitation were performed in the continuous-wave regime. The results reveal a polarization profile determined by the hole relaxation. A higher degree of polarization was observed for the luminescence related to the recombination of electrons in the second conduction subband. This suggests that the photo-created electrons localized close to the Fermi level maintain their polarization. (C) 1999 Academic Press.
URI: 
ISSN: 0749-6036
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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