Title: The atomic structure of Co dimers in silicon
Authors: Van Bavel, AM ×
Langouche, Guido
Overhof, H #
Issue Date: Jan-1998
Publisher: Iop publishing ltd
Series Title: Semiconductor science and technology vol:13 issue:1 pages:108-115
Abstract: We present Mossbauer spectra for Co-related point defects in silicon with emphasis on Co dimers. With the help of ab initio total energy calculations we show that dimers constructed from two interstitial Co-i point defects would not be stable. Dimers involving substitutional Co-Si point defects are also not stable unless in aggregates with donors. We show that an aggregate involving one Si-i self-interstitial is the most likely candidate for the Co dimer observed experimentally.
ISSN: 0268-1242
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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