Semiconductor science and technology vol:13 issue:1 pages:108-115
We present Mossbauer spectra for Co-related point defects in silicon with emphasis on Co dimers. With the help of ab initio total energy calculations we show that dimers constructed from two interstitial Co-i point defects would not be stable. Dimers involving substitutional Co-Si point defects are also not stable unless in aggregates with donors. We show that an aggregate involving one Si-i self-interstitial is the most likely candidate for the Co dimer observed experimentally.