Author:

Keywords:

silicon carbide, polytypic transition, sic oxidation, photoemission, sic/sio2, states, oxides, Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, SiC oxidation, SIC/SIO2, STATES, OXIDES, 02 Physical Sciences, 03 Chemical Sciences, 09 Engineering, Applied Physics, 34 Chemical sciences, 40 Engineering, 51 Physical sciences

Abstract:

The characteristic energy loss corresponding to band-to-band electron excitation at the SiC surface is observed in the internal photoemission (IPE) spectra Of SiC-SiO2 interfaces for three polytypes of SiC (4H, 6H, and 15R). From this feature the SiC bandgap width at the interface with thermal oxide was found to be the same as in the bulk of SiC. This importantly indicates that oxidation in dry O-2 at temperatures as high as 1300 degreesC does not lead to polytypic transition in SiC. (C) 2003 Elsevier B.V. All rights reserved.