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Title: Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation
Authors: Mamor, Mohammed ×
Pipeleers, Bert
Auret, FD
Maes, J
Hayne, Manus
Moshchalkov, Victor
Vantomme, André #
Issue Date: Dec-2003
Publisher: Elsevier science sa
Series Title: Materials science and engineering b-solid state materials for advanced technology vol:105 issue:1-3 pages:179-183
Abstract: We have used electrical measurements Deep level transient spectroscopy (DLTS) complemented by high-resolution X-ray diffraction (HRXRD) and Rutherford backscattering spectroscopy (RBS) measurements for assessment of the defects introduced in p-Si1-xGex during 160keV erbium ion implantation. From deep-level transient spectroscopy, it was observed that two prominent defects with discrete energy levels above the valence band, were introduced during Er ion implantation. The observed defects have similar signatures as those introduced during alpha-particle irradiation and electron beam metal deposition, indicating that these defects are more likely not related to Er but only to implantation induced damage such as primary defects. The generated defects expand the Si1-xGex lattice in the implanted region, which results in the presence of the tail in the high-resolution X-ray diffraction spectra. After rapid thermal annealing (RTA) at 850degreesC for 30 s in nitrogen ambient, a reduction in defect density as well as a relaxation of the Si1-xGex lattice is observed for all x values. A dominant Er-related sharp emission in the 1.541 mum region was observed at room temperature and neither the intensity of the Er emission nor the emission peak position were influenced by the Ge content or the strain relaxation in the epilayers. (C) 2003 Elsevier B.V. All rights reserved.
URI: 
ISSN: 0921-5107
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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