Title: Characterization of Si(111) crystals implanted with Sb+ ions and annealed by rapid thermal processing
Authors: Labbani, R. ×
Halimi, R.
Laoui, Tahar
Vantomme, André
Pipeleers, Bert
Roebben, Gert #
Issue Date: Sep-2003
Publisher: Elsevier Sequoia
Series Title: Materials Science and Engineering B, Advanced Functional Solid-state Materials vol:102 issue:1-3 pages:390-397
Abstract: Monocrystalline Si(I 1 1) targets are implanted (at room temperature) with antimony ions at 120 keV energy to 5 X 10(14) or 5 x 10(15) Sb+ cm(-2) dose. The samples are heat treated by means of rapid thermal processing (RTP) at 1000 degreesC during 60 s, under nitrogen atmosphere. In this work, we report the measured evolution of the silicon surface damage and the radiation damage recovery in relation to antimony dose and RTP processing. We also study the behavior of antimony dopant into Si(I 1 1) specimens. The investigation is carried out by He+ Rutherford backscattering spectrometry (RBS; operating at 1.57 MeV energy in both random and channeling modes), X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. It is shown that a good surface damage recovery is obtained for all the annealed samples. However, after RTP, a significant loss of antimony has occurred for the specimens which are implanted with 5 x 10(15) Sb+ cm(-2) dose. This suggests an antimony out-diffusion. Finally, a good morphological characterization of the specimens is provided by AFM. (C) 2003 Elsevier B.V. All rights reserved.
ISSN: 0921-5107
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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