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Title: Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study
Authors: Wu, MF
Vantomme, André
Hogg, SM
Langouche, Guido
Van der Stricht, W
Jacobs, K
Moerman, I #
Issue Date: Jan-1999
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:74 issue:3 pages:365-367
Abstract: An InGaN layer was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate using a thick (>2.2 mu m) GaN intermediate layer. The In composition, which cannot be unambiguously determined by x-ray diffraction (XRD) or by photoluminescence, was determined by Rutherford backscattering (RBS). The perpendicular and parallel elastic strain of the In0.18Ga0.82N layer, e(perpendicular to) = + 0.21% and e(parallel to) = -0.53%, respectively, were derived using a combination of XRD and RBS/channeling. The small ratio \e(perpendicular to)/e(parallel to)\ = 0.40 indicates that the In0.18Ga0.82N layer is much stiffer in the c-axis direction than in the a-axis direction. (C) 1999 American Institute of Physics. [S0003-6951(99)01703-9].
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Department of Rehabilitation Sciences - miscellaneous
# (joint) last author

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