ITEM METADATA RECORD
Title: Relief of thermal-stress in heteroepitaxial gaas on si by mesa release and deposition
Authors: Deboeck, J
Van Hoof, Chris
Deneffe, K
Mertens, Robert Pierre
Borghs, Gustaaf #
Issue Date: Sep-1991
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:59 issue:10 pages:1179-1181
Abstract: We demonstrate a mesa release and deposition (MRD) technology to realize stress relief in GaAs layers on Si, useful in practical device applications. A thin AlAs layer is incorporated in the heteroepitaxial GaAs layer about 1-mu-m from the GaAs/Si interface. Mesas are etched down to the AlAs release layer and subsequently underetched in a 5% HF solution at room temperature. Photoresist clamps keep the mesas in their exact position during the underetch process which results in a self-aligned redeposition on the substrate after resist removal. We used spatially resolved photoluminescence on 100 X 200-mu-m2 GaAs-on-Si mesas before and after the MRD process to demonstrate the stress relief Uniform stress relief is found and the residual strain observed in the photoluminescence spectra at 77 K (0.05 +/- 0.02%) is attributed to strain thermally induced upon cooling from 300 to 77 K.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science