Title: Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements
Authors: Afanas'ev, Valeri
Houssa, Michel
Stesmans, Andre
Adriaenssens, GJ
Heyns, MM #
Issue Date: Nov-2001
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:59 issue:1-4 pages:335-339
Abstract: Electron energy barriers between the valence band of (100)Si and the conduction bands of ultrathin Al2O3 and ZrO2 insulators grown by atomic-layer deposition were determined using internal photoemission of electrons. The barriers for Al2O3 and ZrO2 are found to be 3.25 +/-0.08 and 3.1 +/-0.1 eV, respectively, i.e. significantly lower than for SiO2 (4.25 +/-0.05 eV). Thermal oxidation at 650-800 degreesC strongly suppresses tunneling current through enhancement of the barriers at the Si/Al2O3 and Si/ZrO2 interfaces. However, it does not reduce the high density of band tail states in the insulators suggesting that silicates are formed. (C) 2001 Elsevier Science B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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