Title: Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks and the dispersive transport model
Authors: Houssa, A
Afanas'ev, Valeri
Stesmans, Andre
Heyns, MM #
Issue Date: Nov-2001
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:59 issue:1-4 pages:367-371
Abstract: The generation of defects in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks is studied through the time-dependent current density variation DeltaJ(G)(t) = J(G)(t) - J(G)(0) observed during constant gate voltage stress of MOS capacitors. The time dependence of the defect density variation DeltaN(ot) is calculated within a dispersive transport model, assuming that these defects are produced during the random hopping transport of positively charged species in the insulating layer. The stress voltage and gate insulator thickness dependence of DeltaJ(G)(t) can be very well reproduced by this model, and the values obtained for the fitting parameters are close to those pertaining to the dispersive transport of H+. (C) 2001 Elsevier Science B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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