Title: Annealing behavior and lattice site location of Er implanted InGaN
Authors: Alves, E ×
Wahl, Ulrich
Correia, MR
Pereira, S
De Vries, Bart
Vantomme, André #
Issue Date: May-2003
Publisher: Elsevier science bv
Series Title: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:206 pages:1042-1046
Abstract: Single crystalline InGaN epilayers with different In content were implanted with Er. fluences in the range of 1 x 10(13)-5 x 10(15) cm(-1) at room temperature. The structural changes and lattice site location were studied with emission channeling and RBS/channeling. Photoluminescence measurements were also performed to study the optical properties of the implanted samples. After implantation of 1 x 10(13) Er+ cm(-2), the emission channeling results show the incorporation of a significant fraction of Er in substitutional Ga/In sites. For fluences of 1 x 10(15) Er+ cm(-2) the aligned RBS spectrum along the [0 0 0 1] direction reveals the displacement of the Er ions into random sites in the entire implanted region. Proximity cap annealing at 400 and 500 degreesC leads to some damage recovery on the samples implanted with lowest fluence accompanied by an increase of the substitutional fraction of Er. Despite the lattice disorder, a fraction of the Er ions are incorporated into optically active sites and luminescence emission was observed at 1.54 mum after annealing at 400 degreesC. (C) 2003 Elsevier Science B.V. All rights reserved.
ISSN: 0168-583X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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