ITEM METADATA RECORD
Title: High-performance InAs quantum well Hall sensors on germanium substrates
Authors: Behet, M
De Boeck, J
Borghs, Gustaaf
Mijlemans, P #
Issue Date: Nov-1998
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:34 issue:23 pages:2273-2274
Abstract: High quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy. The excellent transport properties resulted in sensitivities of 0.85T(-1) (voltage drive) and 370 V/A/T (current drive) for a cross-shaped sensor at room temperature. The results show that the performance of Hall sensors on germanium and on GaAs substrates is comparable in terms of sensitivity and temperature stability.
URI: 
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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