Title: Electrical activity of interfacial paramagnetic defects in thermal (100) Si/SiO2
Authors: Stesmans, Andre ×
Afanas'ev, Valeri #
Issue Date: Apr-1998
Publisher: Published by the American Physical Society through the American Institute of Physics
Series Title: Physical Review B, Condensed Matter and Materials Physics vol:57 issue:16 pages:10030-10034
Abstract: The correlation be tween the detrimental electrically active interface traps and the electron-spin-resonance-active point defects P-b0 and P-b1 (unpaired Si orbitals) was studied through controlled variation, both relatively and absolutely, of the defect bath densities. Unlike previous inference, no electrical activity of P-b1 as an interface state could be traced, thus questioning its relevance for device fabrication, while all P-b0's appear active. A fundamental reason is inferred as to why the (100) Si surface dominates device fabrication. [S0163-1829(98)03211-1].
ISSN: 2469-9950
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science