Il Nuovo Cimento della Società Italiana di Fisica D, Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics vol:18 issue:2-3 pages:293-297
We have shown through Mossbauer spectroscopy that the electric field gradient (EFG), associated with an atomic defect, is sensitive to the bending of ultrathin Si crystals. The changes in the EFG depend on the bending direction. A direct application is the derivation of the orientation of defects that are located in the crystal's surface region. We have used this observation for determining the configuration of Co dimers in Si. Based on the bending experiments, the pair axis is found to point in the  direction with respect to the host lattice.