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Title: Mossbauer spectroscopy on bent Si crystals
Authors: VanBavel, AM ×
Degroote, Stefan
Vantomme, André
Langouche, Guido #
Issue Date: Feb-1996
Publisher: Editrice Compositori
Series Title: Il Nuovo Cimento della Società Italiana di Fisica D, Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics vol:18 issue:2-3 pages:293-297
Abstract: We have shown through Mossbauer spectroscopy that the electric field gradient (EFG), associated with an atomic defect, is sensitive to the bending of ultrathin Si crystals. The changes in the EFG depend on the bending direction. A direct application is the derivation of the orientation of defects that are located in the crystal's surface region. We have used this observation for determining the configuration of Co dimers in Si. Based on the bending experiments, the pair axis is found to point in the [110] direction with respect to the host lattice.
URI: 
ISSN: 0392-6737
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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