International journal of RF and microwave computer-aided engineering vol:12 issue:5 pages:439-447
HEMTs on germanium have the advantage that the substrate can be easily removed, which facilitates integration into low-cost MCM-D circuit implementations. Although germanium has (dispersive) characteristics similar to silicon, we show that the large-signal modeling of these thinned Ge based metamorphic high-electron mobility transistors (HEMTs) is similar to that of GaAs and InP HEMTs. Two types of look-up table based nonlinear models that are respectively based on direct extraction and optimization are developed and evaluated. (C) 2002 Wiley Periodicals, Inc.