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Title: Development of extraction and optimization based large-signal models for thinned metamorphic high-electron mobility transistors on germanium
Authors: Schreurs, Dominique *
Van Niekerk, Cornell * ×
Vandersmissen, Raf
Borghs, Gustaaf #
Issue Date: Sep-2002
Publisher: John wiley & sons inc
Series Title: International journal of RF and microwave computer-aided engineering vol:12 issue:5 pages:439-447
Abstract: HEMTs on germanium have the advantage that the substrate can be easily removed, which facilitates integration into low-cost MCM-D circuit implementations. Although germanium has (dispersive) characteristics similar to silicon, we show that the large-signal modeling of these thinned Ge based metamorphic high-electron mobility transistors (HEMTs) is similar to that of GaAs and InP HEMTs. Two types of look-up table based nonlinear models that are respectively based on direct extraction and optimization are developed and evaluated. (C) 2002 Wiley Periodicals, Inc.
ISSN: 1096-4290
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Faculty of Engineering Science - miscellaneous
ESAT- TELEMIC, Telecommunications and Microwaves
Physics and Astronomy - miscellaneous
* (joint) first author
× corresponding author
# (joint) last author

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