Title: Evaluation of vacuum bonded GaAs/Si spin-valve transistors
Authors: Dessein, Kristof ×
Boeve, H
Kumar, PSA
De Boeck, J
Lodder, JC
Delaey, Lucas
Borghs, Gustaaf #
Issue Date: May-2000
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:87 issue:9 pages:5155-5157
Abstract: In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%. (C) 2000 American Institute of Physics. [S0021-8979(00)71408-3].
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physical Metallurgy and Materials Engineering Section (-)
Physics and Astronomy - miscellaneous
× corresponding author
# (joint) last author

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