Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:190 pages:543-546
The lattice location of implanted silver in Si was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of radioactive Ag-111 at a dose of 2-3 x 10(12) cm(-2), we identify around 30% of Ag on near-substitutional sites (approximate to0.45 Angstrom from ideal S-sites). Upon annealing at 200-300 degreesC, the fraction on near-S sites reaches a maximum around 60-80%. For higher annealing temperatures it decreases again and at 600 degreesC Ag starts to diffuse out of the Si samples. We estimate the activation energy for the dissociation of near-substitutional Ag to be 1.82.2 eV. The experimental results are compared to those of Cu in Si, and common features and characteristic differences in the behavior of the two group 1 B metals are discussed. (C) 2002 Published by Elsevier Science B.V.