Defects in semiconductors - icds-19, pts 1-3 vol:258-2 pages:623-627
Raman spectroscopy measurements were carried out on silicon single crystals which were irradiated with a fast-neutron dose of 1.7 and 3.2x10(21) n/cm(2) (E > 0.1 MeV). This irradiation gives rise to large regions of structural damage in the material. We report on the appearance of a Raman band at 483 cm(-1), indicating the introduction of an amorphous fraction due to the fast-neutron irradiation. At lower Raman frequencies we also observed a feature reminiscent of the so-called boson peak, which is a typical characteristic for amorphous solids.