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Title: Raman scattering measurements in neutron-irradiated silicon
Authors: Coeck, M
Laermans, C
Provoost, R
Silverans, Roger
Issue Date: 1997
Publisher: Transtec publications ltd
Series Title: Defects in semiconductors - icds-19, pts 1-3 vol:258-2 pages:623-627
Abstract: Raman spectroscopy measurements were carried out on silicon single crystals which were irradiated with a fast-neutron dose of 1.7 and 3.2x10(21) n/cm(2) (E > 0.1 MeV). This irradiation gives rise to large regions of structural damage in the material. We report on the appearance of a Raman band at 483 cm(-1), indicating the introduction of an amorphous fraction due to the fast-neutron irradiation. At lower Raman frequencies we also observed a feature reminiscent of the so-called boson peak, which is a typical characteristic for amorphous solids.
URI: 
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Semiconductor Physics Section
Solid State Physics and Magnetism Section

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