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Title: Bit-selective read and write with coincident current scheme in spin-valve/diode MRAM cells
Authors: Boeve, H
Das, Johan
Bruynseraede, C
De Boeck, J
Borghs, Gustaaf #
Issue Date: Sep-1998
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:34 issue:18 pages:1754-1755
Abstract: An array of magnetic memory cells, each consisting of a spin-valve structure in series with a GaAs diode, is demonstrated. Bit-addressability in the matrix, based on a DRAM-like floor plan, is proved for both write and read operations using a coincident current scheme. By implementing a series diode in the memory cell, read signals up to 10mV were measured.
URI: 
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
# (joint) last author

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