Title: Model for the anomalous off-current of polysilicon thin-film transistors and diodes
Authors: Rodriguez, A
Moreno, Eg
Pattyn, Hugo
Nijs, Jf
Mertens, Robert Pierre
Issue Date: May-1993
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:40 issue:5 pages:938-943
Abstract: Due to the different crystallographic orientations of the grains in polysilicon thin films, their grain boundaries exhibit a high density of crystallographic defects that are often electrically active. Applying the equations of the transitions between different defect energy levels to a simple junction theory, the qualitative and, to a certain extent, quantitative characteristic trends of the reverse current of such defected junctions can be explained. This constitutes an important modeling method of a problem that still exists in the use of polysilicon thin-film transistors for certain applications.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems

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