Title: Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy
Authors: Ofuchi, H
Oshima, M
Tabuchi, M
Takeda, Y
Akinaga, H
Nemeth, S
De Boeck, J
Borghs, Gustaaf #
Issue Date: Apr-2001
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:78 issue:17 pages:2470-2472
Abstract: A local structural transition in heavily Fe-doped GaN films related to the magnetic properties has been revealed by fluorescence x-ray absorption fine structure (XAFS) analysis. The structural transition is explained (or considered to be induced) by the change in the degree of hybridization between Fe 3d and N 2p states, which can be evaluated by x-ray absorption near edge structure spectra. The XAFS analysis indicates that the present diluted magnetic semiconductor based on GaN can be fabricated by electron cyclotron resonance microwave plasma-assisted low-temperature molecular-beam epitaxy. (C) 2001 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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