Title: Influence of O and C co-implantation on the lattice site of Er in GaN
Authors: De Vries, Bart ×
Matias, V
Vantomme, André
Wahl, Ulrich
Rita, EMC
Alves, E
Lopes, AML
Correia, JG
ISOLDE Collaboration #
Issue Date: May-2004
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:84 issue:21 pages:4304-4306
Abstract: The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope Er-167m give direct evidence that the majority (approximate to90%) of Er atoms are located on substitutional Ga sites for all samples. Annealing up to 900degreesC does not change these fractions, although it reduces the Er root-mean-square (rms) displacements. The only visible effect of oxygen or carbon doping is a small increase in the rms displacements with respect to the undoped sample. (C) 2004 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science