Intragap states in SmB6

Sluchanko, NE; Glushkov, VV; Gorshunov, BP; Demishev, SV; Kondrin, MV; Pronin, AA; Volkov, AA; Savchenko, AK; Gruner, G; Bruynseraede, Yvan; Moshchalkov, Victor; Kunii, S

doi:10.1103/PhysRevB.61.9906

Intragap states in SmB6

Author:

Sluchanko, NE

Glushkov, VV ; Gorshunov, BP ; Demishev, SV ; Kondrin, MV ; Pronin, AA ; Volkov, AA ; Savchenko, AK ; Gruner, G ; Bruynseraede, Yvan ; Moshchalkov, Victor ; Kunii, S

Keywords:

intermediate-valence, hybridization, Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, INTERMEDIATE-VALENCE, HYBRIDIZATION, 02 Physical Sciences, 03 Chemical Sciences, 09 Engineering, Fluids & Plasmas, 34 Chemical sciences, 40 Engineering, 51 Physical sciences

Abstract:

The results of wide-range measurements of the low-frequency, rf, and microwave conductivity in the typical mixed-valent narrow-gap semiconductor samarium hexaboride are presented. The established steplike anomaly of conductivity sigma(v) around 10 GHz is discussed in the framework of the exciton-polaron approach and coherent-state formation in SmB6 at helium temperatures. A combined analysis of the dc- and wide-range ac-transport characteristics and dielectric permittivity data at low temperatures is developed.