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Title: Structural characterization of ion-beam synthesized NiSi2 layers
Authors: Wu, MF ×
Dewachter, J
Van Bavel, AM
Moons, R
Vantomme, André
Pattyn, Hugo
Langouche, Guido
Bender, H
Vanhellemont, J
Temst, Kristiaan
Bruynseraede, Yvan #
Issue Date: Aug-1995
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:78 issue:3 pages:1707-1712
Abstract: NiSi2(111) and NiSi2(100) layers with good crystalline quality have been formed by ion-beam synthesis. An unusual Ni atom distribution showing two completely separated layers during a single implantation step has been observed by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The orientation, strain, and stiffness of the NiSi2 layers have been studied by RBS/channeling, x-ray diffraction, and TEM. The results show that the continuous NiSi2 layers have type-A orientation with a parallel elastic strain larger than the theoretical value of 0.46% for pseudomorphic growth. The perpendicular strain of the NiSi2(111) layers is apparently smaller than that of NiSi2(100) layers, indicating a higher stiffness in the [111] direction. (C) 1995 American Institute of Physics.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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