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Title: Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
Authors: Boeve, H
Bruynseraede, C
Das, Johan
Dessein, Kristof
Borghs, Gustaaf
De Boeck, J
Sousa, RC
Melo, LV
Freitas, PP #
Issue Date: Sep-1999
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on Magnetics vol:35 issue:5 pages:2820-2825
Abstract: We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The speed at which the magnetic memory signal can be read depends on many factors. An important factor is the magnetic element itself, the size, magnetic characteristics and absolute resistance. Secondly, the design of the read-out electronics is a key issue. A third determining factor is the technology in which the electronics are fabricated. Some features are indicated that are essential in optimizing MRAM in future.
URI: 
ISSN: 0018-9464
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
# (joint) last author

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