Title: Generation of 4 negative differential resistance regions using 2 resonant tunneling diodes
Authors: Fobelets, K
Genoe, Jan
Vounckx, R
Borghs, Gustaaf #
Issue Date: Sep-1992
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:19 issue:1-4 pages:887-890
Abstract: In this paper we report on the experimental observation of four negative differential resistance regions in the current-voltage characteristic of a monolithically integrated seriesconnection of two resonant tunneling diodes at room temperature. An equivalent circuit of the seriesconnection is proposed which gives an explanation of the experimental results. The required current-voltage characteristics of the two resonant tunneling diodes in the seriesconnection, to generate the multiple negative resistance regions, are discussed. Simulations based on the equivalent circuit, show the possibility of five negative differential resistance regions with a monolithically integrated seriesconnection of two resonant tunneling diodes.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
# (joint) last author

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