Journal of non-crystalline solids vol:303 issue:1 pages:162-166
Paramagnetic point defects were probed by electron spin resonance in stacks of (1 00)Si with nm-thin SiO2, ZrO2, and Al2O3 layers. After hydrogen photodesorption (8.48 eV: 300 K). the Si dangling bond interface centers P-b0, P-bl appear as prominent defects at all (100)Si/dielectric interfaces. This P-b0, P-bl fingerprint. generally unique for the thermal (100)Si/SiO2 interface, indicates that, while reassuring for the Si/SiOx/ZrO2 case, the as-deposited (100)Si/Al2O3 interface is basically Si/SiO2-like. The interfaces are under enhanced stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 interface properties, as exposed by the Pb-type defects (density similar to 1 x 10(12) cm(-2)), may be approached by appropriate annealing (similar to650 degreesC). A high quality (100)Si/SiO2, type interface. with ultrathin SiO2 interlayer, may be basic to successful application of high-k metal oxides in Si-based devices. (C) 2002 Elsevier Science Ltd. All rights reserved.