Title: Electron spin resonance analysis of interfacial Si dangling bond defects in stacks of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si
Authors: Stesmans, Andre
Afanas'ev, Valeri
Houssa, Michel #
Issue Date: May-2002
Publisher: Elsevier science bv
Series Title: Journal of non-crystalline solids vol:303 issue:1 pages:162-166
Abstract: Paramagnetic point defects were probed by electron spin resonance in stacks of (1 00)Si with nm-thin SiO2, ZrO2, and Al2O3 layers. After hydrogen photodesorption (8.48 eV: 300 K). the Si dangling bond interface centers P-b0, P-bl appear as prominent defects at all (100)Si/dielectric interfaces. This P-b0, P-bl fingerprint. generally unique for the thermal (100)Si/SiO2 interface, indicates that, while reassuring for the Si/SiOx/ZrO2 case, the as-deposited (100)Si/Al2O3 interface is basically Si/SiO2-like. The interfaces are under enhanced stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 interface properties, as exposed by the Pb-type defects (density similar to 1 x 10(12) cm(-2)), may be approached by appropriate annealing (similar to650 degreesC). A high quality (100)Si/SiO2, type interface. with ultrathin SiO2 interlayer, may be basic to successful application of high-k metal oxides in Si-based devices. (C) 2002 Elsevier Science Ltd. All rights reserved.
ISSN: 0022-3093
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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