Title: Dependence of strain at the (111)Si/SiO2 interface on interfacial Si dangling-bond concentration
Authors: Nouwen, Bert ×
Stesmans, Andre #
Issue Date: Sep-2000
Publisher: Elsevier Sequoia
Series Title: Materials Science and Engineering A, Structural Materials: Properties, Microstructure and Processing vol:288 issue:2 pages:239-243
Abstract: Thermal oxidation of Si intrinsically gives rise to the generation of defects at the Si/SiO2 interface as a result of mismatch induced stress. In standard thermal (111)Si/SiO2, the dominant paramagnetic defect observed by electron spin resonance (ESR) is the P-b centre (interfacial . Si = Si-3). In the present study, the inherently incorporated as-grown P-b density ( similar to 4.9 x 10(12) cm(-2)) was significantly enhanced to various levels, up to 3.1 x 10(13) cm(-2), by means of the previously unveiled method for P-b creation through appropriate postoxidation annealing in H-2. This resulted, among others, in the observation of a P-b dependent anisotropic broadening of the ESR signal, partially arising from dipolar interaction within the essentially two-dimensional spin system. Successful quantitative simulation by a computational model has enabled detailed analysis of the line broadening mechanisms. The simulations reveal concentration related variations in the strain broadening contribution indicating a growing relaxation of the interfacial stress with increasing [P-b]. The results are discussed in the light of the connection between defect generation and the relaxation of stress. (C) 2000 Elsevier Science S.A. All rights reserved.
ISSN: 0921-5093
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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