Title: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C
Authors: Wahl, Ulrich ×
Correia, JG
Langouche, Guido
Marques, JG
Vantomme, André #
Issue Date: 1997
Publisher: Trans Tech Publications
Series Title: Materials Science Forum vol:258-2 pages:1503-1508
Conference: ICDS-19 location:Aveiro, Portugal date:July 1997
Abstract: Conversion electron emission channeling from the isotope Er-167m (2.28 s), which is the decay product of radioactive Tm-167 (9.25 d), offers a means of monitoring the lattice sites of Er in single crystals. We have used this method to determine the lattice location of Er-167m in Si directly following room temperature implantation of Tm-167, after subsequent annealing steps, and also in situ during annealing up to 900 degrees C. Following the recovery of implantation damage around 600 degrees C, about 90% of Er occupies near-tetrahedral interstitial sites in both FZ and CZ Si. While in FZ Si Er-167m was found to be stable on these sites even at 900 degrees C, the tetrahedral Er fraction in CZ Si decreased considerably after annealing for 10 min at 800 degrees C and above.
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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