Title: Initial growth mechanism of atomic layer deposited TiN
Authors: Satta, A ×
Vantomme, André
Schuhmacher, J
Whelan, CM
Sutcliffe, V
Maex, Karen #
Issue Date: May-2004
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:84 issue:22 pages:4571-4573
Abstract: We have investigated the role of the substrate in the growth mechanism of TiN films grown by atomic layer deposition. The early stage of the film formation is dominated by a Volmer-Weber-type growth mode, driven by the ligand exchange of reactant molecules with preferential surface function groups. The density of function groups on the initial surface dictates the density and the vertical dimension of TiN islands, the evolution of the substrate coverage, and the minimum thickness at which the films become continuous. (C) 2004 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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